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NESG204619-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG204619-T1-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG204619-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG204619-T1-A

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    NESG204619-T1

  • 功能描述：

    射頻硅鍺晶體管 NPN Amp/Oscillator

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
19+
SOT-523
200000
詢價
CEL
20+
SOT-523
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價
CEL
2022+
SOT-523
20000
只做原裝進(jìn)口現(xiàn)貨.假一罰十
 詢價
CEL
2025+
SOT-523
7695
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
CEL
2310+
2013PB
15000
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
CEL
2022+
3 針 SuperMiniMold(M33)
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
CEL
24+
3-SMD 扁平引線
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
RENESAS/瑞薩
23+
SOT-23
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
NEC
17+
SOT343
6200
100%原裝正品現(xiàn)貨
 詢價
更多NESG204619-T1供應(yīng)商 更新時間2025-3-15 8:30:00

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