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NP100N04MDH	文件：371.65 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04MUH	文件：371.64 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04NDH	文件：280.83 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04NUH	文件：280.83 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04NUJ	文件：223.75 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) ?Highcurrentrating:ID	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04NUJ	文件：281.33 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04NUJ.S18-AY	文件：223.75 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) ?Highcurrentrating:ID	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PDH	文件：344.75 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04PUH	文件：344.72 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04PUK	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicat	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3m?MAX.(VGS=10V,ID=50A) ?LowCissCiss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK	文件：345.38 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N04PUK_V01	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3m?MAX.(VGS=10V,ID=50A) ?LowCissCiss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK-E1-AY	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicat	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK-E1-AY	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3m?MAX.(VGS=10V,ID=50A) ?LowCissCiss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK-E2-AY	文件：231.81 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicat	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N04PUK-E2-AY	文件：823.71 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3m?MAX.(VGS=10V,ID=50A) ?LowCissCiss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP100N055MDH	文件：371.06 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N055MUH	文件：371.48 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP100N055NDH	文件：280.23 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市威爾健半導(dǎo)體有限公司	NP100N04MDH-S18	NCE/新潔能	23+	TO-220	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	NP100N04MDH-S18	R	23+	T0-220	10000	公司只做原裝正品	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	NP100N04MDH-S18	VB	21+	T0-220	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市河鋒鑫科技有限公司	NP100N04MDH-S18	NEC	22+	TO-220	6000	十年配單,只做原裝	詢價(jià)
深圳市匯萊威科技有限公司	NP100N04MDH-S18		VB	T0-220	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NP100N04MDH-S18	NEC	23+	TO-220	32687	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NP100N04MDH-S18	NEC	23+	TO-220	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	NP100N04MDH-S18	NEC	22+	TO-220	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市宏捷佳電子科技有限公司	NP100N04MDH-S18	R	24+	T0-TO-220	37650	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
深圳市晨豪科技有限公司	NP100N04NUJ	RENESAS/瑞薩	23+	TO-262	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)

更多NP10供應(yīng)商更新時(shí)間2025-1-11 11:00:00

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