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NP100N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Features ?Superlowon-stateresistance RDS(on)=3.25m?MAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=4900pFTYP.(VDS=25V) ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(D

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(D

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(D

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P06PDG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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NCE/新潔能
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
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VB
21+
T0-220
10000
原裝現(xiàn)貨假一罰十
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NEC
22+
TO-220
6000
十年配單,只做原裝
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NEC
23+
TO-220
32687
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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NEC
23+
TO-220
6000
原裝正品,支持實(shí)單
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NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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R
24+
T0-TO-220
37650
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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RENESAS/瑞薩
23+
TO-262
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
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RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
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更多NP10供應(yīng)商 更新時(shí)間2025-4-7 11:01:00