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NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75m?MAX.(VGS=10V,ID=55A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUJ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.2m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP109N055PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.2m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.2m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.2m?MAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NCE/新潔能
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
VB
21+
T0-220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
NEC
22+
TO-220
6000
十年配單,只做原裝
 詢價(jià)
NEC
23+
TO-220
32687
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
NEC
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
R
25+
T0-TO-220
37650
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
RENESAS/瑞薩
23+
TO-262
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
更多NP10供應(yīng)商 更新時間2025-4-11 15:54:00

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