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NP32N055IDE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055IDE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055IDE_15

SWITCHING N-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055IHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055IHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=25mΩMAX.(VGS=10V,ID=16A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055ILE

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NP32N055ILE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP32N055ILE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055ILE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055SDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055SDE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SDE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=25mΩMAX.(VGS=10V,ID=16A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055SLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP32N055SLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SLE

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NP32N055SLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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NEC
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rene
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87424
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rene
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10000
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RENE
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80000
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RENE
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13754
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4500
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rene
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N
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更多NP32N055IDE供應(yīng)商 更新時(shí)間2025-1-11 14:02:00

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