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NP84N055MLE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N055MLE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055NHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055NHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N055NHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP84N055NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N055NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055NLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055NLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP84N055NLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
NATLINEAR/南麟
24+
TO-252-2L
156000
專營NATLINEAR南麟原裝正品保障
 詢價
R
24+
T0-220
5000
只做原裝公司現(xiàn)貨
 詢價
R
24+
T0-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
RENESAS/瑞薩
TO-220
22+
6000
十年配單,只做原裝
 詢價
RENESAS/瑞薩
23+
TO-220
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
2022+
TO-220
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
R
25+
T0-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多NP8供應商 更新時間2025-4-24 19:05:00

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