首頁 >NVHL020N090SC1>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NVHL020N090SC1 | Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=196nC) ?LowEffectiveOutputCapacitance(typ.Coss=296pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwit | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NVHL020N090SC1 | MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=196nC) ?LowEffectiveOutputCapacitance(typ.Coss=296pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwit | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,D2PAK-7L Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=200nC) ?LowEffectiveOutputCapacitance(Coss=295pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlev | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L900V,20m,112A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,TO-247-3L Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelint | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,D2PAK-7L Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=200nC) ?LowEffectiveOutputCapacitance(typ.Coss=295pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSComplia | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L900V,20m,112A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247-3LD |
100000 |
全新原裝 |
詢價 | ||
onsemi |
24+ |
TO-247-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
onsemi(安森美) |
23+ |
TO-247 |
8110 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ON |
23+ |
TO-247-3 |
26800 |
專業(yè)幫助客戶找貨 配單,誠信可靠! |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
onsemi(安森美) |
23+ |
TO-247 |
10000 |
只做原裝 假一賠萬 |
詢價 | ||
ON |
21+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
onsemi |
23+ |
TO-247-3 |
1356 |
原廠正品現(xiàn)貨SiC MOSFET全系列 |
詢價 | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
onsemi |
24+ |
原廠封裝 |
242958 |
有掛就有貨只做原裝正品 |
詢價 |
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