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NTBG020N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=200nC) ?LowEffectiveOutputCapacitance(Coss=295pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlev

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG020N090SC1

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m, 112 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG020N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=200nC) ?LowEffectiveOutputCapacitance(Coss=295pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlev

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N090SC1

MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N090SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,TO-247-3L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelint

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL020N090SC1D

MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG020N090SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L900V,20m,112A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG020N090SC1

SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,D2PAK-7L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=200nC) ?LowEffectiveOutputCapacitance(typ.Coss=295pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSComplia

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL020N090SC1

SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,TO-247-3L

Features ?Typ.RDS(on)=20m@VGS=15V ?Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=196nC) ?LowEffectiveOutputCapacitance(typ.Coss=296pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwit

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL020N090SC1

MOSFET??SiCPower,SingleN-Channel,TO247-3L900V,20m,118A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
23+
D2PAK7 (TO-263-7L HV)
100000
全新原裝
 詢價(jià)
onsemi
24+
D2PAK-7
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
onsemi(安森美)
23+
D2PAK-7
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ON(安森美)
23+
D2PAK-7
10108
公司只做原裝正品,假一賠十
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
23+
原廠原封
30
訂貨1周 原裝正品
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
onsemi
23+
D2PAK-7
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ON
23+
IC
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
更多NTBG020N090SC1供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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