NXH200T120H3Q2F2STG分立半導體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

NXH200T120H3Q2F2STG屬于分立半導體產(chǎn)品的晶體管-IGBT-模塊。由安森美半導體公司制造生產(chǎn)的NXH200T120H3Q2F2STG晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導體器件，主要用作電子開關，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。

The NXH200T120H3Q2F2SG is a power module containing a split

T?type neutral point clamped three?level inverter. The integrated field

stop trench IGBTs and SiC Diodes provide lower conduction losses

and switching losses, enabling designers to achieve high efficiency

and superior reliability. NXH200T120H3Q2F2STG is Pre?applied

Thermal Interface Material (TIM) module.

Features

? Split T?type Neutral Point Clamped Three?level Inverter Module

? 1200 V Ultra Field Stop IGBTs & 650 V FS4 IGBTs

? 650 V SiC Diodes

? Low Inductive Layout

? Solderable Pins

? Thermistor

? Pre?applied Thermal Interface Material (TIM)

Typical Applications

? Solar Inverters

? Uninterruptible Power Supplies