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RJH60D0DPM

Silicon N Channel IGBT Application: Inverter

Features ?Shortcircuitwithstandtime(5μstyp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiode(100nstyp.)inonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPM_15

600V - 22A - IGBT Application: Inverter

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60D0DPM-00#T1

Package：TO-220-3 整包；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 45A 40W TO3PFM

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

RJP60D0DPE

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPM

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

詳細參數(shù)

  • 型號：

    RJH60D0DPM

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel IGBT

  • Application：

    Inverter

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
23+
TO-3PF-3
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
RENESAS/瑞薩
19+
TO-3PFM
4000
原裝/現(xiàn)貨
 詢價
RENESAS
23+
TO-3PFM
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Renesas
22+
TO3PFM
9000
原廠渠道,現(xiàn)貨配單
 詢價
RENESAS/瑞薩
22+
TO-3PFM
6000
進口原裝 假一罰十 現(xiàn)貨
 詢價
RENESAS/瑞薩
22+
TO-3PFM
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
RENESAS
19+
TO-3PFM
4000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Renesas Electronics America
2022+
TO-3PFM
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
RENESAS/瑞薩
22+
QFN
25833
鄭重承諾只做原裝進口貨
 詢價
RENESAS
23+
TO-3PFM
6500
原廠原裝正品
 詢價
更多RJH60D0DPM供應(yīng)商 更新時間2025-3-25 11:10:00

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