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SCT205K122D3B25-F

Snubber Film Capacitor

TypeSCTDirectMount Highlights ?Highpeak&RMScurrentcapability ?MountsdirectlytotheIGBTmodule ?Lowinductance

CDE

Cornell Dubilier Electronics

SCT205K162D3B25-F

Snubber Film Capacitor

TypeSCTDirectMount Highlights ?Highpeak&RMScurrentcapability ?MountsdirectlytotheIGBTmodule ?Lowinductance

CDE

Cornell Dubilier Electronics

SCT205K601A3B25-F

Snubber Film Capacitor

TypeSCTDirectMount Highlights ?Highpeak&RMScurrentcapability ?MountsdirectlytotheIGBTmodule ?Lowinductance

CDE

Cornell Dubilier Electronics

SCT2080KE

N-channel SiC power MOSFET

Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Fastreverserecovery 4)Easytoparallel 5)Simpletodrive 6)Pb-freeleadplating;RoHScompliant Application ?Motordrives ?Inductionheating ?Solarinverters ?DC/DCconverters

ROHMRohm

羅姆羅姆半導體集團

SCT2080KEHR

Marking:SCT2080KE;Package:TO-247N;Automotive Grade N-channel SiC power MOSFET

Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Fastreverserecovery 4)Easytoparallel 5)Simpletodrive 6)Pb-freeleadplating;RoHScompliant 7)QualifiedtoAEC-Q101 Application ?Automobile ?Switchmodepowersupplies

ROHMRohm

羅姆羅姆半導體集團

SCT20N120

Very high operating temperature capability

Description ThissiliconcarbidePowerMOSFETisproducedexploitingtheadvanced,innovativepropertiesofwidebandgapmaterials.Thisresultsinunsurpassedon-resistanceperunitareaandverygoodswitchingperformancealmostindependentoftemperature.Theoutstandingthermalpropertiesof

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT20N120H

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·HighSpeedSwitchingwithLowCapacitances ·EasytoParallelandSimpletoDrive ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageDC/DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SCT20N120H

Marking:SCT20N120;Package:H2PAK-2;Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H2PAK-2 package

Features ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Solarinverters,UPS ?Motordrives ?HighvoltageDC-DCconverters ?Switch

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT20N170AG

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=64mΩ(TYP.)@VGS=20V ·HighSpeedSwitchingwithLowCapacitance ·AvalancheRuggedness APPLICATIONS ·MotorDrives ·SolarInverters,UPS ·DownHoleDrilling ·BatteryChargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SCT2120AF

N-channel SiC power MOSFET

Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Fastreverserecovery 4)Easytoparallel 5)Simpletodrive 6)Pb-freeleadplating;RoHScompliant Application ?Motordrives ?DC/DCconverters ?Inductionheating ?Switchmodepowersupplies ?Solarinverters

ROHMRohm

羅姆羅姆半導體集團

詳細參數(shù)

  • 型號:

    SCT

  • 制造商:

    MAGNELAB

  • 功能描述:

    CURRENT TRANSFORMER SPLITCORE 25A

  • 功能描述:

    CURRENT TRANSFORMER, SPLITCORE, 25A

  • 功能描述:

    CURRENT TRANSFORMER, SPLITCORE, 25A; Input

  • Current:

    25A; Turns

  • Ratio:

    -; Frequency

  • Min:

    50Hz; Frequency

  • Max:

    400Hz; Transformer

  • Mounting:

    -;

  • SVHC:

    No SVHC(19-Dec-2012);

  • Accuracy:

    1%; Current Range

  • AC:

    25A; Secondary Current

  • Nom:

    25A; Sensor ;RoHS

  • Compliant:

    Yes

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更多SCT供應商 更新時間2025-4-7 14:02:00