SI9912_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

4.5- to 5.5-V Operation

Undervoltage Lockout

250-kHz to 1-MHz Switching Frequency

Shutdown Quiescent Current <5
A

One Input PWM Signal Generates Both Drive

Bootstrapped High-Side Drive

Operates from 4.5- to 30-V Supply

TTL/CMOS Compatible Input Levels

1-A Peak Drive Current

Break-Before-Make Circuit

APPLICATIONS

Multiphase Desktop CPU Supplies

Single-Supply Synchronous Buck Converters

Mobile Computing CPU Core Power Converters

Standard-Synchronous Converters

High Frequency Switching Converters

DESCRIPTION

The Si9912 is a dual MOSFET high-speed driver with

break-before-make. It is designed to operate in high frequency

dc-dc switchmode power supplies. The high-side driver is

bootstrapped to handle the high voltage slew rate associated

with “floating” high-side gate drivers. Each driver is capable of

switching a 3000-pF load with 60-ns propogation delay and

25-ns transition time. The Si9912 comes with an internal

break-before-make feature to prevent shoot-through current in

the external MOSFETs. A shutdown pin is used to enable the

driver. When disabled, the quiescent current of the driver is

less than 5
A.

The Si9912 is available in both standard and lead (Pb)-free, 8-pin

SOIC packages for operation over the industrial operation range

(?40C to 85C).