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AIKW30N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AR30N60

ACTIVE/SYNCHRONOUSRECTIFIER

DIODES

Diodes Incorporated

BIDW30N60T

BIDW30N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns?ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

DAM30N60C

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM30N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM30N60S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA30N60LSD

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA30N60LSDTU

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N60LSD

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N60LSDTU

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW30N60VD

DiscreteIGBT(High-SpeedVseries)600V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

G30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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INFINEON/英飛凌
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
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INFINEON/英飛凌
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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INFINEON/英飛凌
23+
TO-247
8000
只做原裝現(xiàn)貨
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INFINEON/英飛凌
23+
TO-247
7000
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INFINEO
2020+
TO-247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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INFINEON/英飛凌
22+
TO-247
20000
原裝現(xiàn)貨,實(shí)單支持
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INFINEON/英飛凌
22+
TO-247
88222
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INFINEON
22+
TO-247
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
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INFINEON
1932+
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242
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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INFINEON
2022+
TO-247
57550
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更多SKW30N60HSIC供應(yīng)商 更新時(shí)間2024-11-19 10:59:00