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STGD3NB60H

N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperfomances.Thesuffix”H”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforhighfrequen

STMICROELECTRONICSSTMicroelectronics

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STGD3NB60HD

N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperfomances. ■HIGHINPUTIMPEDANCE ■OFFLOSSESINCLUDETAILCURRENT ■LOWGATECHARGE ■HIGHFREQUENCY

STMICROELECTRONICSSTMicroelectronics

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STGD3NB60HDT4

N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperfomances. ■HIGHINPUTIMPEDANCE ■OFFLOSSESINCLUDETAILCURRENT ■LOWGATECHARGE ■HIGHFREQUENCY

STMICROELECTRONICSSTMicroelectronics

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STGD3NB60HDT4

Package:TO-252-3,DPak(2 引線 + 接片),SC-63;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 10A 50W DPAK

STMICROELECTRONICSSTMicroelectronics

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STGD3NB60K

N-CHANNEL3A-600V-TO-220/DPAK/D2PAKPowerMESTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances. Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

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STGD3NB60S

N-CHANNEL3A-600VDPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD3NB60S

N-CHANNEL3A-600V-TO-220/DPAKPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD3NB60SD

N-CHANNEL3A-600VDPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedtoachieveminimumon-voltagedropforlowfrequenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGD3NB60SD

N-CHANNEL3A-600V-DPAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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STGF3NB60FD

N-CHANNEL3A-600V-TO-220/TO-220FP/DPAK/D2PAKPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“F”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforfrequencya

STMICROELECTRONICSSTMicroelectronics

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詳細(xì)參數(shù)

  • 型號:

    STGD3NB60H

  • 功能描述:

    IGBT 晶體管 N-CH 600V 3A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
SOT-252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價
ST
24+
TO-220
2508
詢價
ST
24+
TO-220
2500
原裝現(xiàn)貨熱賣
詢價
ST
05+
?TO-220
2000
全新原裝 絕對有貨
詢價
ST
24+
TO-220
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價
ST全系列
22+23+
TO-220
25952
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST
2020+
SOT-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ST
2023+
SOT-252
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
ST
1709+
TO-252
32500
普通
詢價
ST/意法
22+
SOT-252
20000
保證原裝正品,假一陪十
詢價
更多STGD3NB60H供應(yīng)商 更新時間2025-1-26 14:00:00