DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH? IGBTs, with outstanding perfomances.

■ HIGH INPUT IMPEDANCE

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH FREQUENCY OPERATION

■ TYPICAL SHORT CIRCUIT WITHSTAND TIME

5micro S-family, 4 micro H family

■ CO-PACKAGED WITH TURBOSWITCH? ANTIPARALLEL DIODE

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD3NB60HD屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單。意法半導(dǎo)體（ST）集團制造生產(chǎn)的STGD3NB60HD晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。