首頁(yè) >STW20N65M5>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STW20N65M5 | N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STW20N65M5 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
STW20N65M5 | N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
STW20N65M5
- 功能描述:
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO247 |
45 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
ST/意法 |
21+ |
TO247 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
22+ |
TO-247-3 |
6006 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價(jià) | ||
STMicroelectronics |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
ST |
23+ |
TO-247 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ST |
22+23+ |
TO-247 |
15085 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST原裝 |
19+ |
TO-247 |
9860 |
一級(jí)代理 |
詢價(jià) | ||
ST |
2020+ |
TO-247 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
ST |
23+ |
TO-247 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
ST |
21+ |
TO-247 |
230 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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