| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelD-PAK/I-PAK/TO-92MOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 | TAK_CHEONG | ||
500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 | TAK_CHEONG | ||
500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 | TAK_CHEONG | ||
500mWDO-35HermeticallySealedGlassSmallSignalSchottkyDiodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 | TAK_CHEONG | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8? GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC |
相關(guān)規(guī)格書
更多- SX52BD_PQ
- SY100E111JC
- SY100E111LJC
- SY100E131JC
- SY100EL11VZC
- SY100EL34LZC
- SY100EL90VZC
- SY100EL92ZC
- SY100ELT22LZC
- SY100ELT23LZC
- SY10E101JC
- SY10E111JC
- SY10E116JC
- SY10E142JC
- SY10E151JC
- SY87700LZI
- SZA1010T
- T062
- T0816
- T0911XH
- T1451A
- T1896
- T3588CN
- T35L6432A-6Q
- T431
- T531A
- T65118ACD
- T6668
- T6963C
- T6A40
- T6W87A
- T7115AMC
- T7130FC
- T7220PC
- T7234ML
- T7256ML2
- T7270ME
- T7288EL
- T7300IV
- T7525SEC
- T7548ME2
- T7688FL
- T7705
- T7705-B
- T7950MC2
相關(guān)庫存
更多- SY100E016JC
- SY100E111LEJC
- SY100E116JC
- SY100E417JC
- SY100EL32VZC
- SY100EL58ZC
- SY100EL91LZC
- SY100ELT20VZC
- SY100ELT22ZC
- SY100H842ZC
- SY10E104JC
- SY10E112JC
- SY10E131JC
- SY10E143JC
- SY10ELT22ZC
- SY89429JC
- SZA1010T_K1
- T0806
- T082
- T1004
- T14L256A
- T224162B-35J
- T3589CN
- T35L6464A-5Q
- T5001
- T5683
- T65118ACP
- T66CIRLSKB
- T6A39
- T6C37A
- T7035MC
- T712
- T7213EC
- T7230ML3
- T7237ML
- T7264ML
- T7270ML
- T7296-EL
- T7525EC
- T7536ML
- T7570ML2
- T7700
- T7705A
- T7759
- T7C01F
