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6186

PrecisionPotentiometer/PositionSensor

BITECHBi technologies

瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司

AIC6186

0.5ADualUSBHigh-SidePowerSwitch

AIC

AIC Inc.（Advanced Industrial Computer, Inc.）

AOZ6186

High-SpeedUSB2.0(480Mbps)DPDTSwitch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

CEB6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,33A,RDS(ON)=23mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,33A,RDS(ON)=20mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=26mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8A,RDS(ON)=26mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8.1A,RDS(ON)=21mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
TI
22+
QFN
800000
原裝正品
 詢價
TI
2016+
QFN
6528
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
TI
21+
QFN
421
原裝現(xiàn)貨假一賠十
 詢價
TI
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TI/德州儀器
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TI
21+
QFN
13880
公司只售原裝,支持實單
 詢價
TI/德州儀器
22+
QFN
50000
只做原裝假一罰十,歡迎咨詢
 詢價
TI
14+
QFN
421
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
TI
23+
QFN
3200
正規(guī)渠道,只有原裝!
 詢價
TI/德州儀器
2023+
QFN
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
更多THS6186IRTJ供應(yīng)商 更新時間2025-1-22 14:44:00

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