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VNB35N07

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07-E

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07TR-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07TR-E

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP35N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07-E

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07FI

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    VNP35N07FI-E

  • 功能描述:

    電源開(kāi)關(guān) IC - 配電 N-Ch 70V 35A OmniFET

  • RoHS:

  • 制造商:

    Exar

  • 輸出端數(shù)量:

    1

  • 開(kāi)啟電阻(最大值):

    85 mOhms

  • 開(kāi)啟時(shí)間(最大值):

    400 us

  • 關(guān)閉時(shí)間(最大值):

    20 us

  • 工作電源電壓:

    3.2 V to 6.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOT-23-5

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更多VNP35N07FI-E供應(yīng)商 更新時(shí)間2025-3-10 10:50:00