| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N593 | BIDIRECTIONAL TRANSISTOR BidirectionalTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=10A ?LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=10A ?LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=10A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=10A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=20A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=20A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=20A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=20A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=30A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@lc=30A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@lc=20A APPLICATIONS ?Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid/r | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
isc Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=30A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ?DCCurrentGain-:hFE=20-100@IC=30A ?LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS ?Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SEME-LAB Seme LAB | SEME-LAB | ||
isc Silicon NPN Power Transistors | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon NPN Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
Bipolar NPN Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB | SEME-LAB | ||
Bipolar NPN Device | SEME-LAB Seme LAB | SEME-LAB | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SEME-LAB Seme LAB | SEME-LAB | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SEME-LAB Seme LAB | SEME-LAB |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_SYM
- 封裝形式：
直插封裝
- 極限工作電壓：
40V
- 最大電流允許值：
- 最大工作頻率：
>0.6MHZ
- 引腳數(shù)：
3
- 可代換的型號：
AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX52D,
- 最大耗散功率：
0.125W
- 放大倍數(shù)：
- 圖片代號：
D-9
- vtest：
40
- htest：
600100
- atest：
0
- wtest：
0.125
詳細(xì)參數(shù)
- 型號：
2N593
- 制造商：
NJSEMI
- 制造商全稱：
New Jersey Semi-Conductor Products, Inc.
- 功能描述：
BIDIRECTIONAL TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOT |
2339+ |
CAN3 |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
MOTOROLA |
24+ |
CAN3 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOT |
24+ |
CAN3 |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
MOT |
24+ |
TO-3 |
10000 |
詢價 | |||
ON |
1738+ |
TO-3 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
MOTOROLA |
專業(yè)鐵帽 |
CAN3 |
1200 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
2000 |
12 |
詢價 | |||||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
ON/安森美 |
23+ |
TO-3 |
3988 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
CHINA |
22+ |
TO-3 |
640 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價 |
