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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
2N7002KT	文件：659.22 Kbytes Page：5 Pages	N-ChannelENHANCEMENTMODEPOWERMOSFET FEATURES: Gate-SourceESDProtected:1500V FastSwitchingSpeed LowOn-Resistance LowVoltageDriver APPLICATIONS: Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories BatteryOperatedSystems PowerSupplyConverterCircuits Load/PowerSwitchi	WEITRON Weitron Technology	WEITRON
2N7002KT	文件：169.65 Kbytes Page：3 Pages	ChannelEnhancementMOSFET FEATURES ?LowGateChargeforFastSwitching. ?ESDProtectedGate. APPLICATIONS ?PowerManagementLoadSwitch ?ESDProtected:1500V ?Easilydesigneddrivecircuits	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KT	文件：169.65 Kbytes Page：3 Pages	N-ChannelEnhancementMOSFET	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS
2N7002KT	文件：1.23552 Mbytes Page：3 Pages	SOT-523Plastic-EncapsulateMosfets	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司	LEIDITECH
2N7002KT	文件：716.72 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowonresistanceRDS(ON) ?Lowgatethresholdvoltage ?Lowinputcapacitance ?ESDprotectedupto2KV	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司	GWSEMI
2N7002KTB	文件：117.39 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB	文件：158.48 Kbytes Page：7 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KU	文件：689.54 Kbytes Page：6 Pages	60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva	Good-Ark GOOD-ARK Electronics	Good-Ark
2N7002KU	文件：642.66 Kbytes Page：7 Pages	AdvancedMOSFETprocesstechnology	SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司	SILIKRON
2N7002KU	文件：56.45 Kbytes Page：4 Pages	NChannelMOSFET	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KU	文件：370.33 Kbytes Page：4 Pages	NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KV	文件：425.76 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KV	文件：1.1607 Mbytes Page：4 Pages	Plastic-EncapsulateMOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：170.76 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KW	文件：624.98 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KW	文件：291.95 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2N7002KW	文件：1.01269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
2N7002KW	文件：386.34 Kbytes Page：4 Pages	N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：113.46 Kbytes Page：8 Pages	N-ChannelSMDMOSFETESDProtection Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr	FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司	FORMOSA

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市高捷芯城科技有限公司	2N7002KQBZ	Nexperia(安世)	23+	DNF3	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
天津市博通航睿技術(shù)有限公司	2N7002KQBZ	NEXPERIA			184		詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	2N7002KQBZ		24+	N/A	60000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳萬(wàn)勝威節(jié)能科技有限公司	2N7002KQBZ	Nexperia/瀹変笘	22		9710	瀹炲崟璇風(fēng)數(shù)璇濊仈緋?18923460326 鍘熻姝e搧	詢價(jià)
深圳市雙美芯科技有限公司	2N7002KQBZ	Nexperia(安世)	23+	DNF-3	7087	Nexperia安世原裝現(xiàn)貨庫(kù)存,原廠技術(shù)支持!	詢價(jià)
深圳市芯祺盛科技有限公司	2N7002KQBZ	KINGBRIGHT	24+	SMD	160	C06-二極管	詢價(jià)
北京京北通宇電子元件有限公司	2N7002KQBZ	NEXPERIA	24+	con	152	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index	詢價(jià)
深圳市南煜科技有限公司	2N7002KQBZ	NEXPERIA	2342+		3152	只做原裝正品,支持實(shí)單	詢價(jià)
深圳市德力誠(chéng)信科技有限公司	2N7002KQBZ	NEXPERIA	24+	con	35960	查現(xiàn)貨到京北通宇商城	詢價(jià)
深圳市水星電子有限公司	2N7002KQBZ	Nexperia	24+	3-XDFN	14696	專注原裝正品代理分銷,認(rèn)準(zhǔn)水星電子	詢價(jià)

更多2N7002KQBZ供應(yīng)商更新時(shí)間2025-1-10 8:14:00

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