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2SK351

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3510

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3510

MOS Field Effect Transistor

Features ●Superlowon-stateresistance:RDS(on)=8.5mMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=8500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3510

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3510-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3510-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3510-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3512

N-CHANNEL SILICON POWER MOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK351

  • 功能描述：

    MOSFET N-CH 75V MP-25/TO-220

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HIT
23+
原廠原裝
4000
全新原裝
 詢價(jià)
24+
TO-3
10000
詢價(jià)
FUJI
2016+
TO-220F
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
FUJI
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
FUJI
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
FUJI
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FujiSemiconductor
新
5
全新原裝 貨期兩周
 詢價(jià)
FUJIELEC
23+
NA
1606
專做原裝正品,假一罰百!
 詢價(jià)
Fuji
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
更多2SK351供應(yīng)商 更新時(shí)間2025-1-8 17:02:00

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