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A5G38H045N分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料
| 廠商型號 |
A5G38H045N |
| 參數(shù)屬性 | A5G38H045N 包裝為散裝；類別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻；產(chǎn)品描述：DMS GAN DFN7X6.5 6L |
| 功能描述 | Airfast RF Power GaN Transistor |
| 文件大小 |
192.69 Kbytes |
| 頁面數(shù)量 |
11 頁 |
| 生產(chǎn)廠商 | NXP Semiconductors |
| 企業(yè)簡稱 |
nxp【恩智浦】 |
| 中文名稱 | 恩智浦半導(dǎo)體公司官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-2 19:18:00 |
A5G38H045N規(guī)格書詳情
This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 3400 to 4000 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 4000 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
Features
? High terminal impedances for optimal broadband performance
? Improved linearized error vector magnitude with next generation signal
? Able to withstand extremely high output VSWR and broadband operating
conditions
? Designed for low complexity analog or digital linearization systems
? Optimized for massive MIMO active antenna systems for 5G base stations
產(chǎn)品屬性
- 產(chǎn)品編號：
A5G38H045NT4
- 制造商：
NXP USA Inc.
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻
- 包裝：
散裝
- 描述：
DMS GAN DFN7X6.5 6L
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