首頁 >BD135LEADFREE&NBSP>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNSiliconEpitaxialPowerTransistor NPNSILICONEPITAXIALPOWERTRANSISTOR ThesedevicesaredesignedasAudioAmplifier andDriversUtilizing. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
PlasticMedium-PowerSiliconNPNTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TO-126Plastic-EncapsulateTransistors FEATURES HighCurrent ComplementToBD136,BD138AndBD140 | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
2.00mmPitchPinHeader,DualRow,SurfaceMount,Horizontal | GCT Global Connector Technology | GCT | ||
NPN7GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications.Thesmallemitterstructures,withintegratedemitter-ballastingresistors,ensurehighoutputvoltagecapabilitiesatalowdistortionlevel. Thedistributionoft | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN7GHzwidebandtransistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSiliconRFTransistor(Forlow-distortionbroadbandoutputamplifierstagesinantennaandtelecommunications) NPNSiliconRFTransistor ?Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA ?PoweramplifiersforDECTandPCNsystems ?Integratedemitterballastresistor ?fT=6GHz | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA ?PoweramplifiersforDECTandPCNsystems ?Integratedemitterballastresistor ?fT=6GHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPN6.5GHzwidebandtransistor DESCRIPTION NPNwidebandtransistorina4-leaddual-emitterSOT172A2packagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES ?Optimumtemperatureprofileandexcellentreliabilitypropertiesensuredbyemitter-ballastingresistorsandapplicationofgoldsandwichm | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST&NBSP |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ST&NBSP |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ST |
24+ |
原廠封裝 |
4000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST |
24+ |
TO126 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
FSC |
22+23+ |
TO-126 |
27152 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
FSC |
23+24 |
TO-126 |
29840 |
主營MOS管,二極.三極管,肖特基二極管.功率三極管 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON |
1809+ |
TO-225 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ON/安森美 |
23+ |
NA |
30000 |
房間原裝現(xiàn)貨特價熱賣,有單詳談 |
詢價 | ||
ON/安森美 |
23+ |
NA |
9250 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨立分銷。原廠核心渠道 |
詢價 |