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BFG520W

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W

NPN9GHzwidebandtransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG520W/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520X

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFG520-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG520-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    BFG520/XR T/R

  • 功能描述：

    射頻雙極小信號晶體管 TAPE-7 TNS-RFSS

  • RoHS：

    否

  • 制造商：

    NXP Semiconductors

  • 配置：

    Single

  • 晶體管極性：

    NPN

  • 最大工作頻率：

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO：

    15 V 發(fā)射極 - 基極電壓

  • VEBO：

    2 V

  • 集電極連續(xù)電流：

    0.15 A

  • 功率耗散：

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度：

    + 150 C

  • 封裝/箱體：

    SOT-223

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
23+
SOT143R
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
NXP
23+
SOT143R
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
NXP
23+
SOT143R
7000
詢價
NXP
21+
SOT143
3000
原裝現(xiàn)貨假一賠十
 詢價
NXP
2020+
SOT143-
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
NXP/恩智浦
23+
SOT143
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP/恩智浦
2022
SOT143
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RHC
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
NXP
10+12+
SOT143
30000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
TDK
2022+
DIP
6000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多BFG520/XR T/R供應(yīng)商 更新時間2025-1-26 9:30:00

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