BLF6G10LS-200R分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

General description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:

◆ Average output power = 40 W

◆ Power gain = 20 dB

◆ Efficiency = 27.5

◆ ACPR = ?40 dBc

■ Easy power control

■ Integrated ESD protection

■ Enhanced ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (800 MHz to 1000 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.