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DE275X2-501N16A中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書
DE275X2-501N16A規(guī)格書詳情
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral lel operation in RF generators and amplifiers at frequencies to >65 MHz.
? Common Source Push-Pull Pair
? N-Channel Enhancement Mode
? Low Qg and Rg
? High dv/dt
? Nanosecond Switching
Features
? Isolated Substrate
? high isolation voltage (>2500V)
? excellent thermal transfer
? Increased temperature and power cycling capability
? IXYS advanced low Qg process
? Low gate charge and capacitances
? easier to drive
? faster switching
? Low RDS(on)
? Very low insertion inductance (<2nH)
? No beryllium oxide (BeO) or other hazardous materials
Advantages
? High Performance Push-Pull RF Package
? Optimized for RF and high speed switching at frequencies to >65MHz
? Easy to mount—no insulators needed
? High power density
產(chǎn)品屬性
- 型號：
DE275X2-501N16A
- 制造商：
IXYS Corporation
- 功能描述：
DE275X2 Series N-Channel 500 Vds 380 mOhms 50 nC 1180 W RF Power Mosfet
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SEEQ |
2020+ |
DIP |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
SEEQ |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
SEEE |
21+ |
CDIP |
502 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
SEEQ |
24+ |
CDIP24 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
SEEQ |
23+ |
原裝原封 |
8888 |
專做原裝正品,假一罰百! |
詢價 | ||
SEEQ |
24+ |
DIP-24 |
105 |
詢價 | |||
SEEQ |
QQ咨詢 |
DIP |
268 |
全新原裝 研究所指定供貨商 |
詢價 | ||
TOKO |
24+ |
SMD |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
SEEQ |
23+ |
DIP |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 |
