DS_K9K1208U0A中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208U0A￠s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208U0A-YCB0/YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply : 2.7V~3.6V

? Organization

- Memory Cell Array : (64M + 2,048K)bit x 8bit

- Data Register : (512 + 16)bit x8bit

? Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

? 528-Byte Page Read Operation

- Random Access : 10ms(Max.)

- Serial Page Access : 60ns(Min.)

? Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

? Command Register Operation

? Package :

- K9K1208U0A-YCB0/YIB0 :

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)