GAN7R0-150LBE中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid

Array (LGA) package. It is a normally-off e-mode device offering superior performance.

2. Features and benefits

? Enhancement mode - normally-off power switch

? Ultra high frequency switching capability

? No body diode

? Low gate charge, low output charge

? Qualified for standard applications

? ESD protection

? RoHS, Pb-free, REACH-compliant

? High efficiency and high power density

? Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm

3. Applications

? High power density and high efficiency power conversion

? AC-to-DC converters, (secondary stage)

? High frequency DC-to-DC converters in 48 V systems

? 400 V to 48 V LLC converters, secondary (rectification) side

? Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

? Datacom and telecom (AC-to-DC and DC-to-DC) converters

? Motor drives

? LiDAR (non-automotive)

? Class D audio amplifiers