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HY57V641620ELTP-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620ESTP-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620ET

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620ET-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HG

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HG-I

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGLT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGLT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGLT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGLT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGLT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-H

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-K

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-S

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY57V641620HGT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
HY
22+
TSOP
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
H-Y-N-I-X
23+
TSOP
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
SKHYNIX
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
SKHYNIX
21+
TSOP
35200
一級代理/放心采購
 詢價
2023+
3000
進口原裝現(xiàn)貨
 詢價
HY
24+
TSOP
217
詢價
HYNIX
23+
SSOP-14P
5000
原裝正品,假一罰十
 詢價
HYNIX
22+23+
TSSOP54
29283
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
HYNIX(海力士)
2117+
TSSOP-54
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
HYNIX(海力士)
2021+
TSSOP-54
499
詢價
更多HY57V641620HGT-H(PRC供應(yīng)商 更新時間2024-11-19 16:24:00

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