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IRFR1018E

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018ETRPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

ISF1018

iscN-ChannelMOSFETTransistor

FEATURES ·Lowdrain-sourceon-resistance :RDS(ON)=0.073Ω(typ.) ·EasytocontrolGateswitching ·Enhancementmode :Vth=2.7to3.7V(VDS=10V,ID=1.5mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KIT1018S

PhotoInterrupter

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

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IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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IR
23+
7000
詢價(jià)
IR
2021+
SOT263
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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IR
23+
SOT263
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IR
21+
SOT263
10000
原裝現(xiàn)貨假一罰十
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IR
2022
SOT263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
IR
23+
SOT263
25800
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
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IR
23+
SOT263
6000
原裝正品,支持實(shí)單
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更多IRF1018ESTRLPBFCT供應(yīng)商 更新時(shí)間2025-1-23 10:00:00