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IRF1404L

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404L

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404LPbF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404PBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

IRF

International Rectifier

IRF1404PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404S

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-220
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
IR
23+
TO-220
3000
全新原裝
 詢價
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-262
35890
詢價
IR
24+
TO-262
8866
詢價
IR
2016+
TO262
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
更多IRF1404BPF供應商 更新時間2025-1-25 14:00:00

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