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IRF1404LPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404LPbF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404PBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

IRF

International Rectifier

IRF1404PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404S

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404S

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404S

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404STRLPBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404Z

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1404Z

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1404Z

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-262
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
TO-262
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
IR
23+
TO-262
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
IR
23+
TO-262
7000
詢價
IR
16+
原廠封裝
6000
原裝現(xiàn)貨假一罰十
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應QQ3171516190
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
2020+
TO-262
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
更多IRF1404LCL供應商 更新時間2025-1-7 10:00:00