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首頁 >IRF250SM>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF250SMD	文件：23.67 Kbytes Page：2 Pages	N.CHANNEL POWER MOSFET FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES	SEME-LAB Seme LAB	SEME-LAB
IRFC250	文件：49.56 Kbytes Page：1 Pages	HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert	IXYS IXYS Corporation	IXYS
IRFM250	文件：15.59 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFM250	文件：163.11 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(TO-254AA) PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan	IRF International Rectifier	IRF
IRFM250	文件：54.01 Kbytes Page：3 Pages	N??HANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFM250	文件：206.14 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFM250	文件：614.32 Kbytes Page：2 Pages	POWERMOSFETTHRU-HOLE(TO-254AA)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFM250D	文件：46.83 Kbytes Page：2 Pages	N–CHANNELPOWERMOSFET VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION	SEME-LAB Seme LAB	SEME-LAB
IRFN250	文件：217.76 Kbytes Page：6 Pages	POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A) RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab	IRF International Rectifier	IRF
IRFN250	文件：25.99 Kbytes Page：2 Pages	N??HANNELPOWERMOSFET FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES	SEME-LAB Seme LAB	SEME-LAB
IRFN250	文件：158.22 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFN250SMD	文件：23.65 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFP250	文件：255.93 Kbytes Page：8 Pages	N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRFP250	文件：518.69 Kbytes Page：7 Pages	N-ChannelPowerMosfets	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRFP250	文件：669.63 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFP250	文件：493.77 Kbytes Page：8 Pages	N-Channel(HexfetTransistors)	IRF International Rectifier	IRF
IRFP250	文件：122.3 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP250	文件：47.01 Kbytes Page：2 Pages	StandardPowerMOSFET N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols	IXYS IXYS Corporation	IXYS
IRFP250	文件：49.56 Kbytes Page：1 Pages	HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert	IXYS IXYS Corporation	IXYS
IRFP250	文件：1.86389 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
IRF250SM
制造商：
SEME-LAB
制造商全稱：
Seme LAB
功能描述：
N.CHANNEL POWER MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF250SMD	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市億鴻豐電子科技有限公司	IRF250SMD	IR		SOT	6000	原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRF250SMD	IR	23+		8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF250SMD	IR	23+		8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRF250SMD	IR	23+		7000		詢價(jià)
深圳市星佑電子有限公司	IRF250TO-3	IR	21+	TO-3	8000	全新原裝公司現(xiàn)貨價(jià)格優(yōu)	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IRF250TO-3	IR	21+	TO-3	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳廊盛科技有限公司	IRF250TO-3	IR	22+	TO-3	50000	只做原裝正品,假一罰十,歡迎咨詢	詢價(jià)
深圳兆威電子有限公司	IRF250其他被動(dòng)元件	IR	23+	TO-3	90000	只做原廠渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF251	IR	24+	TO-3	10000		詢價(jià)

更多IRF250SM供應(yīng)商更新時(shí)間2024-10-26 14:00:00

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