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IRF250SMD

N.CHANNEL POWER MOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFM250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan

IRF

International Rectifier

IRFM250

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM250

SimpleDriveRequirements

IRF

International Rectifier

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM250D

N–CHANNELPOWERMOSFET

VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION

SEME-LAB

Seme LAB

IRFN250

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A)

RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRF

International Rectifier

IRFN250

N??HANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFN250

SimpleDriveRequirements

IRF

International Rectifier

IRFN250SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRFP250

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP250

StandardPowerMOSFET

N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols

IXYS

IXYS Corporation

IRFP250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP250

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF250SM

  • 制造商：

    SEME-LAB

  • 制造商全稱：

    Seme LAB

  • 功能描述：

    N.CHANNEL POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
7000
詢價
IR
21+
TO-3
8000
全新原裝 公司現(xiàn)貨 價格優(yōu)
 詢價
IR
21+
TO-3
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
22+
TO-3
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多IRF250SM供應(yīng)商 更新時間2025-1-10 14:00:00

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