首頁 >IRF3710STRPBF-VB>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF3710STRRPBF

HEXFET?PowerMOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF3710ZGPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=18m? ID=59A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3710ZL

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710ZL

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710ZLPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
IR
24+
原廠封裝
3050
原裝現(xiàn)貨假一罰十
 詢價
IR
01+
SOT263/2.5
2445
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
IR
17+
SOT263/2.5
9988
只做原裝進(jìn)口,自己庫存
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
12+
TO263
2500
原裝現(xiàn)貨/特價
 詢價
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
TO263
3689
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
IR
23+
SOT263
3000
原裝正品假一罰百!可開增票!
 詢價
更多IRF3710STRPBF-VB供應(yīng)商 更新時間2025-2-16 9:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多