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IRL3803

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRL3803L

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803LPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803LPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRL3803PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRL3803PBF

IRMOSFET?

Description FifthGenerationHEXFETsutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersilicon area.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsare wellknownfor,providesthedesignerwithanex

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRL3803S

PowerMOSFET(Vdss=30V,Rds(on)=0.006ohm,Id=140A??

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803S

Logic-LevelGateDrive

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
TO-263
6000
十年配單,只做原裝
 詢價(jià)
IR
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
23+
TO-263
55031
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IR
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢價(jià)
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
IR
2023+環(huán)?，F(xiàn)貨
TO-263
18000
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
IR
2023+
TO-263
50000
原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
45000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
更多IRF3803STRPBF供應(yīng)商 更新時(shí)間2025-3-13 14:01:00

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