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IRF630MFP

N-Channel 200 V (D-S) MOSFET

FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF630MFP

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630MFP

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630N

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630N

iscN-ChannelMOSFETTransistor

?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630N

FastSwitchingSpeed

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630N

N-ChannelMOSFETTransistor

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630NL

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NL

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NL

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630NLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630MF

  • 制造商：

    ST

  • 功能描述：

    N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
11+
9680
詢價(jià)
ST
24+
TO-220F
559053
詢價(jià)
ST
06+
原廠原裝
1851
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
ST/進(jìn)口原
17+
TO-220F
6200
詢價(jià)
ST/進(jìn)口原
24+
TO-220F
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
ST
1816+
TO-220F
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
ST
20+
TO-220F
38560
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
ST
23+
TO-220F
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
ST/意法
22+
TO-220
20000
保證原裝正品,假一陪十
 詢價(jià)
VBsemi(臺(tái)灣微碧)
2112+
TO220F
105000
50個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
更多IRF630MF供應(yīng)商 更新時(shí)間2025-1-8 17:17:00

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