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IRF630NL

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NL

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NL

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF630NLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF630NS

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NS

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF630NS

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NS

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630NSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630NSPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO220
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
TO220
8000
只做原裝現(xiàn)貨
詢價
IR
23+
TO220
7000
詢價
IR
24+
TO220
16500
進口原裝正品現(xiàn)貨
詢價
IR
24+
TO-262
8866
詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
2020+
TO-262
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
更多IRF630NBF供應商 更新時間2024-11-17 14:00:00