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首頁 >IRF640(IR)>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF640A	文件：260.95 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640A	文件：68.86 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF640B	文件：916.61 Kbytes Page：10 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640B	文件：1.68999 Mbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF640FI	文件：65.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF640FP	文件：107.08 Kbytes Page：9 Pages	N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團	STMICROELECTRONICS
IRF640FP	文件：231.21 Kbytes Page：5 Pages	IRF640FP18A200VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
IRF640L	文件：228.71 Kbytes Page：10 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&	IRF International Rectifier	IRF
IRF640L	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640LPBF	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640N	文件：155.4 Kbytes Page：11 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow	IRF International Rectifier	IRF
IRF640N	文件：160.31 Kbytes Page：11 Pages	N-ChannelPowerMOSFETs200V,18A,0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640N	文件：240.04 Kbytes Page：11 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF640N	文件：248.99 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF640N	文件：338.66 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF640N	文件：201.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤150m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF640N	文件：1.19709 Mbytes Page：11 Pages	AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF640NL	文件：155.4 Kbytes Page：11 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow	IRF International Rectifier	IRF
IRF640NL	文件：240.04 Kbytes Page：11 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF640NL	文件：160.31 Kbytes Page：11 Pages	N-ChannelPowerMOSFETs200V,18A,0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市弘為電子有限公司	IRF640(IR)	VISHAY/IR	24+	原廠封裝	350	原裝現(xiàn)貨假一罰十	詢價
深圳市河鋒鑫科技有限公司	IRF640(IR)	IR	22+		6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀電子有限公司	IRF640(IR)	IR	23+		8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRF640(IR)	IR	23+		7000		詢價
深圳市易訊博科技有限公司	IRF640,127	NXP	22+	NA	45000	加我QQ或微信咨詢更多詳細信息,	詢價
深圳市鵬順微電子科技有限公司	IRF640,127	NXP USA Inc.	2022+	TO-220-3	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市振宏微科技有限公司	IRF640[CITE	IR	23+	TO-220	9888	專做原裝正品,假一罰百!	詢價
深圳市賽爾通科技有限公司	IRF640=YTAF640	TOSHIBA	23+		65480		詢價
深圳市星佑電子有限公司	IRF640-010	INTERNATIONA	05+	原廠原裝	4300	只做全新原裝真實現(xiàn)貨供應(yīng)	詢價
深圳市聯(lián)世界科技有限公司	IRF6401	IR	12+	SOT-23	3000	原裝正品現(xiàn)貨庫存價優(yōu)	詢價

更多IRF640(IR)供應(yīng)商更新時間2025-1-19 8:00:00

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