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IRF640PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640PBF

18A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF640PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640PBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF640PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640S

N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET

FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
IR
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價(jià)
IR
23+
TO-263
59440
##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IR
23+
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
 詢價(jià)
IR
2023+
TO220
50000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
IR
23+
TO220
12000
詢價(jià)
IR
21+
TO220
15000
全新原裝現(xiàn)貨 假一賠十
 詢價(jià)
VBsemi(臺(tái)灣微碧)
2112+
TO-220AB
105000
50個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
更多IRF640NTBF供應(yīng)商 更新時(shí)間2025-2-4 14:00:00

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