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IRF6616TR1PBF規(guī)格書詳情
Description
The IRF6616 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS compliant containing no lead or bormide
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Ultra Low Package Inductance
? Optimized for High Frequency Switching
? Low Conduction and Switching Losses
? Compatible with existing Surface Mount Techniques
? Lead-Free
產(chǎn)品屬性
- 型號：
IRF6616TR1PBF
- 功能描述：
MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
08+ |
SMD |
4800 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon/英飛凌 |
24+ |
DIRECTFET |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
24+ |
DIRECTFET |
45000 |
IR代理原包原盒,假一罰十。最低價 |
詢價 | ||
IR |
1816+ |
. |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
DIRECTFET |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
23+ |
DIRECTFET |
25630 |
原裝正品 |
詢價 | ||
IR |
23+ |
SMD |
30000 |
原裝現(xiàn)貨,假一賠十. |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
72000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
Infineon/英飛凌 |
21+ |
DIRECTFET |
6820 |
只做原裝,質(zhì)量保證 |
詢價 |
