首頁 >IRFB16N60L>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB16N60L | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=460mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
IRFB16N60L | SMPS MOSFET | IRF International Rectifier | IRF | |
IRFB16N60L | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFB16N60L | Power MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
SMPS MOSFET | IRF International Rectifier | IRF | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=470mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
LowVCE(sat)IGBT-ShortCircuitSOACapability | IXYS IXYS Corporation | IXYS | ||
LowVCE(sat)IGBT-ShortCircuitSOACapability | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET VDSS=600V ID25=18A RDS(on)≤0.56? PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Incre | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET VDSS=600V ID25=18A RDS(on)≤0.56? PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Incre | IXYS IXYS Corporation | IXYS | ||
Z-MOSRFPowerMOSFET VDSS=600V ID25=18A RDS(on)≤0.56? PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Incre | IXYS IXYS Corporation | IXYS | ||
Triac | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團 | KODENSHI | ||
Triac | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團 | KODENSHI | ||
16.5AMP/600Volts0.40ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-channelEnhancedmodeTO-220FMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IRFB16N60L
- 功能描述:
MOSFET N-Chan 600V 16 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
35890 |
詢價 | |||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
23+ |
TO-220AB |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
2020+ |
TO220 |
40 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
2020+ |
TO220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IRF |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
24+ |
TO-220AB |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
ON/安森美 |
23+ |
TO-220-3 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 |
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