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IRFBC20S

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S

Power MOSFET

FEATURES ?Surface-mount(IRFBC20S,SiHFBC20S) ?Low-profilethrough-hole(IRFBC20L,SiHFBC20L) ?Availableintapeandreel(IRFBC20,SiiHFBC20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S/LPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S_V02

Power MOSFET

FEATURES ?Surface-mount(IRFBC20S,SiHFBC20S) ?Low-profilethrough-hole(IRFBC20L,SiHFBC20L) ?Availableintapeandreel(IRFBC20,SiiHFBC20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20SPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20STRL

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20STRLPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBC20S

  • 功能描述：

    MOSFET N-Chan 600V 2.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-263
35890
詢價(jià)
IR
2016+
TO263
4558
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
IR
06+
原廠原裝
201
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
22+23+
TO263
23897
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
24+
D2-PAK
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
IR
21+
TO263
19000
只做正品原裝現(xiàn)貨
 詢價(jià)
更多IRFBC20S供應(yīng)商 更新時(shí)間2025-1-18 17:20:00

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