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IRFBC20S

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S

Power MOSFET

FEATURES ?Surface-mount(IRFBC20S,SiHFBC20S) ?Low-profilethrough-hole(IRFBC20L,SiHFBC20L) ?Availableintapeandreel(IRFBC20,SiiHFBC20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20S/LPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S_V02

Power MOSFET

FEATURES ?Surface-mount(IRFBC20S,SiHFBC20S) ?Low-profilethrough-hole(IRFBC20L,SiHFBC20L) ?Availableintapeandreel(IRFBC20,SiiHFBC20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20SPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20SSLASHLPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20S_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBC20S

  • 功能描述：

    MOSFET N-Chan 600V 2.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO-263
35890
詢價(jià)
IR
2016+
TO263
4558
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
IR
06+
原廠原裝
201
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
22+23+
TO263
23897
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
24+
D2-PAK
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
IR
21+
TO263
19000
只做正品原裝現(xiàn)貨
 詢價(jià)
更多IRFBC20S供應(yīng)商 更新時(shí)間2025-2-24 17:38:00

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