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IRFBL10N60A

HEXFET Power MOSFET

IRF

International Rectifier

IXFA10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFA10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=740mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.74Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFP10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFP10N60P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=740mΩ(Max)@VGS=10V APPLICATIONS ·Switching ·DC-DCConverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXGA10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGA10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGP10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGP10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXSH10N60

HighSpeedIGBT-ShortCircuitSOACapability

IXYS

IXYS Corporation

IXSH10N60A

HighSpeedIGBT-ShortCircuitSOACapability

IXYS

IXYS Corporation

IXTA10N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFBL10N60A

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR

供應商型號品牌批號封裝庫存備注價格
INTERNATIONA
05+
原廠原裝
13467
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IOR
99+
TO-220
1100
庫存剛更新加微13425146986
 詢價
IR
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
24+
TO-220
35200
一級代理/放心采購
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多IRFBL10N60A供應商 更新時間2025-1-16 10:32:00

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