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IRFBL10N60A

HEXFET Power MOSFET

IRF

International Rectifier

IXFA10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFA10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=740mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.74Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFP10N60P

PowerMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    IRFBL10N60A

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR

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INTERNATIONA
05+
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13467
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IR
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
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IRF
23+
NA
19960
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IR
2023+
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80000
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IR
24+
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35200
一級(jí)代理/放心采購(gòu)
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IR
23+
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50000
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IR
23+
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50000
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IR
21+
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10000
原裝現(xiàn)貨假一罰十
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IR
2022
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80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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IR
22+
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9800
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更多IRFBL10N60A供應(yīng)商 更新時(shí)間2025-2-24 10:34:00