| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=1.7A)
| IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdge | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?E | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.16ohm,Id=1.9A) Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
AdvancedProcessTechnology Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor | IRF International Rectifier | IRF | ||
SurfaceMount,FastSwitching DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?Eas | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號：
IRFC014B
- 制造商：
Vishay Semiconductors
- 功能描述：
MOSFET N-CHANNEL 60V - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 | ||||
IR |
24+ |
65230 |
詢價 | ||||
IR |
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
IR |
23+ |
TO220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
相關(guān)規(guī)格書
更多- IRFC014R
- IRFC024R
- IRFC034R
- IRFC044R
- IRFC054R
- IRFC110
- IRFC110BV
- IRFC11N50AB
- IRFC140B
- IRFC150R
- IRFC18N50KF
- IRFC1Z0R
- IRFC210B
- IRFC210R
- IRFC220B
- IRFC22N50AB
- IRFC234
- IRFC240B
- IRFC250
- IRFC264B
- IRFC2N65AB
- IRFC320B
- IRFC330R
- IRFC350
- IRFC350R
- IRFC360R
- IRFC38N60LB
- IRFC4127EB
- IRFC420AB
- IRFC450B
- IRFC450R
- IRFC460B WAF
- IRFC4N65AB
- IRFC840B
- IRFC9014R
- IRFC9034B
- IRFC9110
- IRFC9110R
- IRFC9130
- IRFC9140
- IRFC9220B
- IRFD010
- IRFD012
- IRFD014_10
- IRFD015
相關(guān)庫存
更多- IRFC024B
- IRFC034B
- IRFC044
- IRFC054B
- IRFC064B
- IRFC110B
- IRFC11N50A
- IRFC140
- IRFC150
- IRFC17N50LB
- IRFC1N60AB
- IRFC20N50AB
- IRFC210BV
- IRFC214B
- IRFC220BV
- IRFC22N50AC
- IRFC240
- IRFC240BV
- IRFC250B
- IRFC2907B
- IRFC310R
- IRFC320R
- IRFC340R
- IRFC350B
- IRFC360B
- IRFC37N50AB
- IRFC40N50LB
- IRFC4127ED
- IRFC450
- IRFC450BV
- IRFC460AB
- IRFC460R
- IRFC830B
- IRFC9014B
- IRFC9024B
- IRFC9034R
- IRFC9110B
- IRFC9120B
- IRFC9130B
- IRFC9140B
- IRFC9240
- IRFD010PBF
- IRFD014
- IRFD014PBF
- IRFD020
