| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A) VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A) VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET 2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-state | IRF International Rectifier | IRF | ||
3.1A,400V,1.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=3.1A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR320) ?Str | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR320,SiHFR320) ?Straightlead(IRFU320,SiHFU320) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?999 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào)：
IRFC320B
- 制造商：
Vishay Semiconductors
- 功能描述：
MOSFET N-CHANNEL 400V - Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
N/A |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
N/A |
7000 |
詢價(jià) | |||
INFINEON |
1503+ |
SMD |
3000 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
Infineon Technologies |
21+ |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | |||
Infineon Technologies |
23+ |
9000 |
原裝正品，支持實(shí)單 |
詢價(jià) | |||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRFC320R
- IRFC340R
- IRFC350B
- IRFC360B
- IRFC37N50AB
- IRFC40N50LB
- IRFC4127ED
- IRFC450
- IRFC450BV
- IRFC460AB
- IRFC460R
- IRFC830B
- IRFC9014B
- IRFC9024B
- IRFC9034R
- IRFC9110B
- IRFC9120B
- IRFC9130B
- IRFC9140B
- IRFC9240
- IRFD010PBF
- IRFD014
- IRFD014PBF
- IRFD020
- IRFD022
- IRFD024_10
- IRFD110
- IRFD110R
- IRFD111
- IRFD112
- IRFD113
- IRFD120
- IRFD120S2497
- IRFD122
- IRFD123PBF
- IRFD1Z1
- IRFD1Z3
- IRFD210PBF
- IRFD211
- IRFD212
- IRFD213
- IRFD214
- IRFD220
- IRFD220PBF
- IRFD224
相關(guān)庫(kù)存
更多- IRFC330R
- IRFC350
- IRFC350R
- IRFC360R
- IRFC38N60LB
- IRFC4127EB
- IRFC420AB
- IRFC450B
- IRFC450R
- IRFC460B WAF
- IRFC4N65AB
- IRFC840B
- IRFC9014R
- IRFC9034B
- IRFC9110
- IRFC9110R
- IRFC9130
- IRFC9140
- IRFC9220B
- IRFD010
- IRFD012
- IRFD014_10
- IRFD015
- IRFD020PBF
- IRFD024
- IRFD024PBF
- IRFD110PBF
- IRFD110U
- IRFD111R
- IRFD112R
- IRFD113PBF
- IRFD120PBF
- IRFD121
- IRFD123
- IRFD1Z0
- IRFD1Z2
- IRFD210
- IRFD210R
- IRFD211R
- IRFD212R
- IRFD213R
- IRFD214PBF
- IRFD220119
- IRFD223
- IRFD224PBF
