零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TRANSISTORN-CHANNEL(Vdss=500V,Rds(on)=0.27ohm,Id=21A) REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFET?TRANSISTOR N-CHANNEL | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-254AA) | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
500V,N-CHANNEL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
MegaMOS-PowerMOSFET MegaMOS?PowerMOSFETN-ChannelEnhancementMode,HDMOS?Family Features ●Repetitiveavalancheenergyrated ●Fastswitchingtimes ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●HighCommutatingdv/dtRating Applications ●SwitchingPowerSupplies ●Motorcontr | IXYS IXYS Corporation | IXYS | ||
N-CHANNEL500V-0.22ohm-20A-TO-247PowerMESH]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.22? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRFP460issuppliedi | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
20A,500V,0.270Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Features ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMoutingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements. | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.27ohm,Id=20A) Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageand | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SwitchModePower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SMPSMOSFET(VDSS=500V,RDS(on)max=0.27廓,ID=20A) | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
IRFC460AB
- 制造商:
Vishay Semiconductors
- 功能描述:
MOSFET N-CHANNEL 500V - Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
7000 |
詢價(jià) | ||||
INFINEON |
1503+ |
SMD |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon Technologies |
21+ |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | |||
Infineon Technologies |
23+ |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | |||
IR |
21+ |
DICE |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
DICE |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
06+ |
原廠原裝 |
5616 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
1508+ |
裸片 |
153 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRFC460B WAF
- IRFC4N65AB
- IRFC840B
- IRFC9014R
- IRFC9034B
- IRFC9110
- IRFC9110R
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- IRFC9140
- IRFC9220B
- IRFD010
- IRFD012
- IRFD014_10
- IRFD015
- IRFD020PBF
- IRFD024
- IRFD024PBF
- IRFD110PBF
- IRFD110U
- IRFD111R
- IRFD112R
- IRFD113PBF
- IRFD120PBF
- IRFD121
- IRFD123
- IRFD1Z0
- IRFD1Z2
- IRFD210
- IRFD210R
- IRFD211R
- IRFD212R
- IRFD213R
- IRFD214PBF
- IRFD220119
- IRFD223
- IRFD224PBF
- IRFD310
- IRFD311
- IRFD320
- IRFD321
- IRFD323
- IRFD420PBF
- IRFD9010PBF
- IRFD9014
- IRFD9015
相關(guān)庫存
更多- IRFC460R
- IRFC830B
- IRFC9014B
- IRFC9024B
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- IRFC9110B
- IRFC9120B
- IRFC9130B
- IRFC9140B
- IRFC9240
- IRFD010PBF
- IRFD014
- IRFD014PBF
- IRFD020
- IRFD022
- IRFD024_10
- IRFD110
- IRFD110R
- IRFD111
- IRFD112
- IRFD113
- IRFD120
- IRFD120S2497
- IRFD122
- IRFD123PBF
- IRFD1Z1
- IRFD1Z3
- IRFD210PBF
- IRFD211
- IRFD212
- IRFD213
- IRFD214
- IRFD220
- IRFD220PBF
- IRFD224
- IRFD2Z0
- IRFD310PBF
- IRFD313
- IRFD320PBF
- IRFD322
- IRFD420
- IRFD9010
- IRFD9012
- IRFD9014PBF
- IRFD9020