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IRFI840A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI840B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFI840G

HEXFETPowerMOSFET(-55V,0.1ohm,-14A)

IRF

International Rectifier

IRFI840G

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF

International Rectifier

IRFI840G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLC

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A)

DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFI840GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI840GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFC840B

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    MOSFET N-CHANNEL 500V - Bulk

供應商型號品牌批號封裝庫存備注價格
IR
22+
NA
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
NA
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
NA
7000
詢價
INFINEON
1503+
SMD
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon Technologies
21+
13880
公司只售原裝,支持實單
 詢價
Infineon Technologies
23+
9000
原裝正品，支持實單
 詢價
IOR
24+
SOT-223-3
60
詢價
IR
23+
SMD
9888
專做原裝正品,假一罰百!
 詢價
IR
1244+
裸片
1066
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
23+
裸片
10000
原裝正品現(xiàn)貨
 詢價
更多IRFC840B供應商 更新時間2025-3-12 14:00:00

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