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IRFD9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-1.0A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion ?En

IRF

International Rectifier

IRFD9120

1.0A,100V,0.6Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD9120

PowerMOSFET

FEATURES ?Dynamicdv/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9120

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9120

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9120

SimpleDriveRequirements

IRF

International Rectifier

IRFE9120

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRFF9120

4A,100V,0.60Ohm,P-ChannelPowerMOSFET

4A,100V,0.60Ohm,P-ChannelPowerMOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringh

Intersil

Intersil Corporation

IRFF9120

P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

SEME-LAB

Seme LAB

IRFF9120

P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9120

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9120

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR/U9120N

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9120

5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A)

DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead

IRF

International Rectifier

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFC9120B

  • 功能描述：

    MOSFET P-Ch 100volts

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
N/A
8000
只做原裝現(xiàn)貨
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IR
23+
N/A
7000
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IR
23+
SMD
9888
專做原裝正品,假一罰百!
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IR
1244+
裸片
1066
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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IR
23+
裸片
10000
原裝正品現(xiàn)貨
 詢價
23+
65480
詢價
IR
05+
原廠原裝
4340
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IR
23+
DIP-4
8238
詢價
更多IRFC9120B供應(yīng)商 更新時間2025-1-5 14:00:00

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