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IRFM9140

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140

POWERMOSFETSURFACEMOUNT(SMD-1)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140SMD

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP9140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140

19A,100V,0.200Ohm,P-ChannelPowerMOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140N

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140N

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-23A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.117Ω(Max)@VGS=-10V DESCRIPTION ·Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand rel

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFP9140PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP9140PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFC9140

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    MOSFET P-CHANNEL 100V - Bulk

供應商型號品牌批號封裝庫存備注價格
IR
23+
裸片
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
1244+
裸片
1066
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
23+
裸片
10000
原裝正品現(xiàn)貨
 詢價
IR
22+
EA-CHIPS&WAFERS
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
7000
詢價
23+
65480
詢價
IR
05+
原廠原裝
4340
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
23+
DIP-4
8238
詢價
IOR
24+
DIP-4P
158
詢價
IR
23+
DIP-4
3100
全新原裝現(xiàn)貨
 詢價
更多IRFC9140供應商 更新時間2025-1-3 13:00:00

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